Precursors are used to deposit a thin film of a material on a wafer by injecting various types of reactive bodies into the reactor during the semiconductor process to induce a chemical reaction. Growth in this sector is expected due to the increased use of ultra-fine and stacked structures in semiconductors.
SiO2
Si-precursorUsed in the manufacturing process of semiconductor DRAM and 3-NAND, and thin film deposition of SiO2 via the CVD/ALD process.
TiO2
Ti-precursorUsed in the manufacturing process of semiconductor DRAM and capacitor and thin film deposition of TiO2 via the CVD/ALD process.
ZrO2
Zr-precursorUsed in the manufacturing process of semiconductor DRAM and capacitor and thai film deposition of ZrO2 via the ALD process.
HfO2
Hf-precursorUsed in the manufacturing process of semiconductor DRAM and capacitor and thin film deposition of HfO2 via the ALD process.
